? semiconductor components industries, llc, 2012 february, 2012 ? rev. 12 1 publication order number: mjd2955/d mjd2955, njvmjd2955t4g(pnp) mjd3055, NJVMJD3055T4G(npn) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (? ? 1? suffix) ? electrically similar to mje2955 and mje3055 ? dc current gain specified to 10 amperes ? high current gain ? bandwidth product ? f t = 2.0 mhz (min) @ i c = 500 madc ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: ? human body model, 3b > 8000 v ? machine model, c > 400 v ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free packages* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. silicon power transistors 10 amperes 60 volts, 20 watts ipak case 369d style 1 dpak case 369c style 1 marking diagrams ayww j xx55g see detailed ordering and shipping information in the package dimensions section on p age 3 of this data sheet. ordering information ayww j xx55g http://onsemi.com a = assembly location y = year ww = work week jxx55 = device code x = 29 or 30 g=pb ? free package dpak ipak
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 2 maximum ratings rating symbol max unit collector ? emitter voltage v ceo 60 vdc collector ? base voltage v cb 70 vdc emitter ? base voltage v eb 5 vdc collector current i c 10 adc base current i b 6 adc total power dissipation @ t c = 25 ? c derate above 25 ? c p d 20 0.16 w w/ ? c total power dissipation (note 1) @ t a = 25 ? c derate above 25 ? c p d 1.75 0.014 w w/ ? c operating and storage junction temperature range t j , t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. ?safe area curves are indicated by figure 1. both limits are applicable and must be observed. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 6.25 ? c/w thermal resistance, junction ? to ? ambient (note 2) r ja 71.4 ? c/w 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ???? ???? ???? ???? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ???? ???? ???? ???? ? ???? ???? 50 ??? ??? adc ?????????????????????? ?????????????????????? ?????????????????????? c) ???? ???? ???? ???? ???? ???? ? ? ???? ???? ???? 0.02 2 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? c) ???? ???? ???? ???? ???? ???? ? ? ???? ???? ???? 0.02 2 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 0.5 ??? ??? ??? ????????????????????????????????? on characteristics ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? dc current gain (note 3) (i c = 4 adc, v ce = 4 vdc) (i c = 10 adc, v ce = 4 vdc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (note 3) (i c = 4 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) ???? ???? ???? ???? ???? ???? ? ? ???? ???? ???? 1.1 8 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter on voltage (note 3) (i c = 4 adc, v ce = 4 vdc) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 1.8 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (i c = 500 madc, v ce = 10 vdc, f = 500 khz) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ??? ??? ??? mhz 3. pulse test: pulse width 300 s, duty cycle 2%.
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 3 ordering information device package type package shipping ? mjd2955g dpak (pb ? free) 369c 75 units / rail mjd2955 ? 1g ipak (pb ? free) 369d 75 units / rail mjd2955t4g dpak (pb ? free) 369c 2,500 tape & reel njvmjd2955t4g dpak (pb ? free) 369c 2,500 tape & reel mjd3055g dpak (pb ? free) 369c 75 units / rail mjd3055t4g dpak (pb ? free) 369c 2,500 tape & reel NJVMJD3055T4G dpak (pb ? free) 369c 2,500 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 4 v, voltage (volts) t, time (s) ? 5 3 2 1 0.5 0.3 0.7 0.2 500 300 200 100 30 20 50 i c , collector current (amp) 2 0.5 0.3 i c , collector current (amp) 0.2 figure 1. power derating figure 2. dc current gain 0.01 0.02 0.05 1 10 25 0.1 figure 3. turn ? on time figure 4. ?on? voltages, mjd3055 t j = 25 ? c t r t j = 150 ? c -55 ? c 25 ? c 1 0.7 0.2 i c , collector current (amp) 0.2 1 6 0.6 2 0.06 0.4 4 i c , collector current (amp) 0.1 0.2 0.3 1 10 25 0.5 3 figure 5. turn ? off time h fe , dc current gain v ce = 2 v 10 5 0.5 25 25 t, temperature ( ? c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t c t a surface mount t s 1.4 0.8 0.6 0 1.2 1 0.4 0.2 t j = 25 ? c v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 ? c v cc = 30 v i c /i b = 10 0.05 0.03 0.02 0.1 0.07 v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2 v 0.1 0.05 0.07 0.1 t d @ v be(off) ? 5 v 0.2 1 6 0.6 2 0.06 0.4 4 0.1 t, time (s) ? t f typical characteristics
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 5 figure 6. ?on? voltages, mjd2955 2 0.1 0 0.2 0.3 0.5 1 3 10 0.8 1.6 1.2 v, voltage (volts) 0.4 5 t j = 25 ? c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 3 v figure 7. switching time test circuit figure 8. thermal response t, time (ms) 1 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1 2 5 10 20 50 100 200 500 r jc(t) = r(t) r jc r jc = 6.25 ? c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.1 0.5 0.2 resistance (normalized) 1 k 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 i c , collector current (amp) 2 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f ? 10 ns duty cycle = 1% 51 d 1 must be fast recovery type, eg: 1n5825 used above i b ? 100 ma msd6100 used below i b ? 100 ma r b and r c varied to obtain desired current levels 0.01 figure 9. maximum forward bias safe operating area 0.01 v ce , collector-emitter voltage (volts) 0.02 5 2 1 10 0.5 0.1 t j = 150 ? c 1ms dc 3 0.3 0.6 1 2 60 20 40 i c , collector current (amp) wire bond limit thermal limit t c = 25 ? c (d = 0.1) second breakdown limit 10 6 4 500 s 0.03 0.05 100 s 5ms forward bias safe operating area information there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 9 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 8. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 6 package dimensions dpak case 369c ? 01 issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd2955, njvmjd2955t4g (pnp) mjd3055, NJVMJD3055T4G (npn) http://onsemi.com 7 package dimensions 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d ? 01 issue c style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mjd2955/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
